bias resistor t ransistor pnp silicon surface mount t ransistor with monolithic bias resistor network device marking and resistor values device marking r1 (k) r2 (k) shipping k3 10 3000/tape & reel leshan radio company, ltd. ? 10000/tape & reel we declare that the material of product compliance with rohs requirements. ldtb114tlt1g inverter , interface, driver features ? ? applications ldtb114tlt1g s-ldtb114tlt3g k3 10 z a b solute maximum ratings (t a= 25 c) 3 collec t or 2 emitter 1 base r1 1) bu il t-i n bi as re si sto r s en ab le th e co n f i g u r a t ion of an in ve rte r ci rcu i t w i thou t conn ecting ex te rn al inp u t resistors (see equivalent circuit). 2 ) t he b i as re sisto r s c ons ist of th i n -fi l m r e si stor s w i t h c o m p l e te is ol ati on t o a l l o w p o sit i ve b i as i ng of th e in p u t. t h e y al so hav e th e a d v a nt a ge o f a l mo st com p le te l y eliminating p a rasitic ef fect s. 3) on ly the on / o f f con d i t io ns n eed to b e se t fo r op eratio n , making the device design easy . z electrical ch aracteristics (t a= 25 c) 1 2 3 sot-23 parameter symbol v cbo v ceo v ebo i c p c tj tstg limits ? 50 ? 40 ? 5 ? 500 200 150 ? 55 to + 150 unit v v v ma mw collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature c c parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t r 1 ? 50 ? 40 ? 5 ? ? ? 100 ? 7 ? ? ? ? ? ? 250 200 10 ? ? ? ? 0.5 ? 0.5 ? 0.3 600 ? 13 v v v a a v ? mhz k ? i c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 50v v eb = ? 4v i c /i b = ? 50ma/ ? 2.5ma i c = ? 50ma , v ce = ? 5v v ce = ? 10v , i e = 50ma , f = 100mhz ? ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff curren collector-emitter saturation voltage dc current transfer ratio transition frequency input resistance ? characteristics of built-in transistor rev.o 1/3 s-ldtb114tlt1g ? s - prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-ldtb114tlt1g ldtb114tlt3g
leshan radio company, ltd. z electrical ch aracteristic cu rv es ldtb114tlt1g 1k 500 200 100 50 20 10 5 2 1 1m 500 2m 5m 10m 20m 50m 100m 200m 500m f ig.1 dc current gain vs. collector curre nt dc current gain : h fe collector current : i c (a) v ce = 5v ta = ? 40 c ta = 100 c ta = 25 c 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 1m 500 2m 5m 10m 20m 50m 100m 200m 500m ta = ? 40 c ta = 100 c ta = 25 c fig.2 collector-emitter saturation voltag e vs. collector current collector saturation voltage : v ce(sat) (v ) collector current : i c (a) i c /i b = 20/1 rev.o 2/3 ;s-ldtb114tlt1g
leshan radio company, ltd. notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 rev.o 3/3 ldtb114tlt1g ;s-ldtb114tlt1g
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